Das Sampling Intervall beträgt 1.4 nm zwischen 350-1000 nm und 2 nm zwischen 1000-2500 nm.
Zur Aufnahme der Spektren werden im VNIR 512 "silizium photo array" Elemente verwendet, im SWIR1 und SWIR2 Subsystem kommen TE(Thermo Electrically)-cooled INGaAs (Indium Gallium Arsenid) Photodioden mit beweglichen 15 Grad oszillierenden Gratings zum Einsatz.
www.eo.uni-jena.deThe sampling interval is 1.4 nm between 350-1000 nm and 2 nm between 1000-2500 nm. VNIR 512 ? silicium photo array ? elements are used for recording of the spectra.
TE(Thermo Electrically)-cooled INGaAs (Indium Gallium Arsenid) photodiodes with moveable 15 degree oscillating gratings are applied for the SWIR1 and SWIR2 subsystems.
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